Bipolar transistor with extrinsic base region and methods of fabrication

ABSTRACT

The present disclosure relates to integrated circuit (IC) structures and methods of forming the same. An IC structure according to the present disclosure can include: a doped substrate region adjacent to an insulating region; a crystalline base structure including: an intrinsic base region located on and contacting the doped substrate region, the intrinsic base region having a first thickness; an extrinsic base region adjacent to the insulating region, wherein the extrinsic base region has a second thickness greater than the first thickness; a semiconductor layer located on the intrinsic base region of the crystalline base structure; and a doped semiconductor layer located on the semiconductor layer.

BACKGROUND

Embodiments of the invention relate generally to improving the structureof a bipolar transistor (also known as a bipolar junction transistor or“BJT”) for high frequency applications (i.e., above approximately fivehundred gigahertz (GHz)). More specifically, embodiments of theinvention include the structure of a bipolar transistor and methods offorming the disclosed structure.

In integrated circuit (IC) structures, a transistor is a criticalcomponent for implementing proposed circuitry designs. In analogcircuitry, numerous functions can be implemented with bipolartransistors. For example, the ability to control the flow of electriccurrent between terminals of the transistor can allow the transistor toact as a switch, and therefore act as a building block for logicfunctions. Generally, a bipolar transistor includes three electricalterminals: a collector, a base, and an emitter. The flow of electricitybetween the collector and emitter terminals of a bipolar transistor canbe controlled by adjusting the electric current or voltage differencebetween the base and emitter terminals.

In circuitry configured to operate at frequencies higher thanapproximately three hundred GHz, bipolar transistors may offer morereliable performance than other types of transistors, e.g., metal oxidesemiconductor field effect transistors (MOSFETs). Bipolar transistorscan be manufactured with equipment and techniques suitable for creatingother microelectronic devices. The effectiveness of a bipolar transistordepends in part on parasitic losses (e.g., resistances and capacitances)within components of the transistor structure being used. As a result,the physical structure of a bipolar transistor can influence thereliability and performance of the transistor when it is implemented ina product or larger system.

SUMMARY

A first aspect of the present disclosure provides an integrated Circuit(IC) structure. The IC structure can include: a doped substrate regionadjacent to an insulating region; a crystalline base structureincluding: an intrinsic base region located on and contacting the dopedsubstrate region, the intrinsic base region having a first thickness; anextrinsic base region adjacent to the insulating region, wherein theextrinsic base region has a second thickness greater than the firstthickness; a semiconductor layer located on the intrinsic base region ofthe crystalline base structure; and a doped semiconductor layer locatedon the semiconductor layer.

A second aspect of the present disclosure provides a method of formingan integrated circuit (IC) structure including: forming a precursorstructure on a substrate, wherein the precursor structure includes: acrystalline base layer, a first semiconductor layer positioned on thecrystalline base layer, and a second semiconductor layer positioned onthe first semiconductor layer; removing the substrate and the precursorstructure to expose a portion of the substrate beneath the precursorstructure; selectively removing the first semiconductor layer, thesecond semiconductor layer, and the exposed portion of the substrate toundercut an exposed extrinsic base region of the crystalline base layer;and growing the extrinsic base region to have a greater thickness thanan intrinsic base region of the crystalline base structure positionedbetween the substrate and the first semiconductor layer.

A third aspect of the present disclosure provides a method of forming anintegrated circuit (IC) structure. The method can include: forming aprecursor structure on a substrate, wherein the precursor structureincludes: a crystalline base layer, a first semiconductor layerpositioned on the crystalline base layer, and a second semiconductorlayer positioned on the first semiconductor layer; removing thesubstrate and the precursor structure to expose two portions of thesubstrate beneath the precursor structure; selectively removing thefirst semiconductor layer, the second semiconductor layer, and theexposed two portions of the substrate to undercut two exposed extrinsicbase regions of the crystalline base layer; and growing the twoextrinsic base regions to have a greater thickness than an intrinsicbase region of the crystalline base structure positioned between thesubstrate and the first semiconductor layer and between the twoextrinsic base regions.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

FIGS. 1-6 depict processes for forming an integrated circuit (IC)structure according to embodiments of the present disclosure.

FIGS. 7-9 depict alternative processes for forming an IC structureaccording to embodiments of the present disclosure.

FIG. 10 is a cross-sectional view of an IC structure according toembodiments of the present disclosure.

It is noted that the drawings of the invention are not to scale. Thedrawings are intended to depict only typical aspects of the invention,and therefore should not be considered as limiting the scope of theinvention. In the drawings, like numbering represents like elementsbetween the drawings.

DETAILED DESCRIPTION

In the following description, reference is made to the accompanyingdrawings that form a part thereof, and in which is shown by way ofillustration specific exemplary embodiments in which the presentteachings may be practiced. These embodiments are described insufficient detail to enable those skilled in the art to practice thepresent teachings, and it is to be understood that other embodiments maybe used and that changes may be made without departing from the scope ofthe present teachings. The following description is, therefore, merelyillustrative.

Embodiments of the present disclosure relate to an integrated circuit(IC) structure which can be implemented as a bipolar transistor, inaddition to methods of forming the disclosed structure. Embodiments ofthe present disclosure can include forming a precursor structure on asubstrate, the precursor structure including: a crystalline base layer,a first semiconductor layer positioned on the crystalline base layer,and a second semiconductor layer positioned on the first semiconductorlayer. Further processes according to the present disclosure includeremoving the substrate and the precursor structure to expose a portionof the substrate beneath the precursor structure, selectively removingthe first semiconductor layer, the second semiconductor layer, and theexposed portion of the substrate to undercut an exposed extrinsic baseregion of the crystalline base layer, and growing the extrinsic baseregion to have a greater thickness than an intrinsic base region of thecrystalline base structure positioned between the substrate and thefirst semiconductor layer.

Embodiments of the IC structure disclosed herein offer a reduced baseresistance and a reduced collector-base capacitance as compared toconventional bipolar transistor structures. An IC structure with thesefeatures can include a doped substrate region adjacent to an insulatingregion, and a crystalline base structure formed at least partially onthe doped substrate region. The crystalline base structure can include:an intrinsic base region located on and contacting the doped substrateregion, and an extrinsic base region adjacent to the insulating region.The thickness of the extrinsic base region can be greater than thethickness of the intrinsic base region. The IC structure can alsoinclude a semiconductor layer located on the intrinsic base region ofthe crystalline base structure; and a doped semiconductor layer locatedon the semiconductor layer.

Turning to FIG. 1, a process according to aspects of the presentdisclosure is shown. Methods of the present disclosure can includeforming several components in layers on a substrate 10. Substrate 10 canbe composed of any currently known or later developed semiconductormaterial, which may include without limitation, silicon, germanium,silicon carbide, and those consisting essentially of one or more III-Vcompound semiconductors having a composition defined by the formulaAl_(X1)Ga_(X2)In_(X3)As_(Y1)P_(Y2)N_(Y3)Sb_(Y4), where X1, X2, X3, Y1,Y2, Y3, and Y4 represent relative proportions, each greater than orequal to zero and X1+X2+X3+Y1+Y2+Y3+Y4=1 (1 being the total relativemole quantity). Other suitable substrates include II-VI compoundsemiconductors having a composition Zn_(A1)Cd_(A2)Se_(B1)Te_(B2), whereA1, A2, B1, and B2 are relative proportions each greater than or equalto zero and A1+A2+B1+B2=1 (1 being a total mole quantity). Furthermore,the entirety of substrate 10 or a portion thereof may be strained.

After forming substrate 10, embodiments of the present disclosure caninclude forming trench isolations 15 to separate materials formed andprocessed according to the present disclosure from other components orIC structures. A trench isolation refers to an electrically insulatingbarrier formed in regions of substrate 10 where semiconductor materialhas been removed to form a trench structure. Trench isolation 15 can beformed by etching or otherwise creating a narrow trench within substrate10, and filling the etched trench with an oxide or other electricallyinsulative material. In a particular embodiment, trench isolation 15 canbe a combination of multiple electrically insulative materials formed byindependent processes. For example, trench isolation 15 may include adeep trench isolation formed up to the surface of substrate 10 by acombination of etching, deposition, chemical mechanical polishing (CMP)or an equivalent combination of processes, with the remainder of trenchisolation 15 being formed as a shallow trench isolation (STI) during adifferent process step. Though trench isolation 15 can be formed at thebeginning of a process for fabricating an IC structure according to thepresent disclosure, it is understood that trench isolation 15 canalternatively be formed during or after other process steps discussedherein.

Some of the materials used to form an IC structure in embodiments of thepresent disclosure can be formed on substrate 10, and may additionallybe positioned between trench isolations 15. Processes discussed hereincan include forming a crystalline base layer 20 on substrate 10.Crystalline base layer 20 may be composed of a crystalline conductive orsemiconductive material including, e.g., monocrystalline silicongermanium (SiGe). A “monocrystalline” substance can include, forexample, a solid crystalline material exhibiting a crystal lattice thatis is continuous and unbroken, thereby having no grain boundaries at itsedges. When formed on substrate 10, crystalline base layer 20 can have athickness of for example, between approximately ten nanometers (nm) andapproximately one-hundred and twenty nm. Crystalline base layer 20 canbe formed by any currently known or later developed process for forminga crystalline on a substrate, which as examples may include depositionor epitaxial growth. Epitaxial growth or “epitaxy” can refer to aprocess in which a thin layer of single-crystal material is deposited ona single-crystal substrate. Epitaxial growth can occur in such a waythat the crystallographic structure of the substrate is reproduced inthe formed material. Alternative techniques can include depositingcrystalline base layer 20 on bulk substrate 10. As used herein, the term“depositing” may include any now known or later developed techniqueappropriate for deposition, including but not limited to, for example:chemical vapor deposition (CVD), low-pressure CVD (LPCVD),plasma-enhanced CVD (PECVD), sub-atmosphere CVD (SACVD) high densityplasma CVD (HDPCVD), rapid thermal CVD (RTCVD), ultra-high vacuum CVD(UHVCVD), limited reaction processing CVD (LRPCVD), metalorganic CVD(MOCVD), sputtering deposition, ion beam deposition, electron beamdeposition, laser assisted deposition, thermal oxidation, thermalnitridation, spin-on methods, physical vapor deposition (PVD), atomiclayer deposition (ALD), chemical oxidation, molecular beam epitaxy(MBE), plating, and evaporation.

In addition, a first semiconductor layer 30 can be formed uponcrystalline base layer 20. First semiconductor layer 30 can have asmaller thickness than crystalline base layer 20. Specifically, firstsemiconductor layer 30 may have a thickness between, e.g., approximatelytwo nm and approximately thirty nm. First semiconductor layer 30 can becomposed of substantially the same material as substrate 10, and may becomposed of an undoped layer of pure silicon (also known in the art asi-silicon or “i-Si”). Alternatively, first semiconductor layer 30 can becomposed of a different semiconductor material from substrate 10.Processes of the present disclosure can also include forming a secondsemiconductor layer 40 upon first semiconductor layer 30. Secondsemiconductor layer 40 can have a thickness between, for example,approximately twenty-five nm and approximately three hundred nm, and maybe doped n-type during or after the processes discussed herein. Dopingis the process of introducing impurities (dopants) into a semiconductormaterial, or elements formed on the semiconductor material, and is oftenperformed with a mask (or previously-formed, elements in place) so thatonly certain areas of the substrate will be doped. For example, dopingis used to form the source and drain regions of a transistor. An ionimplanter is typically employed for the actual implantation. An inertcarrier gas such as nitrogen, or hydrogen, or helium is usually used tobring in the impurity source (dopant). N-type dopants may include butare not limited to: phosphorous (P), arsenic (As), antimony (Sb). Ann-type dopant is an element introduced to semiconductor to generate freeelectron (by “donating” electron to semiconductor). The n-type dopantmust have one more valance electron than the semiconductor. Commondonors in silicon (Si) can include: phosphorous (P), arsenic (As),antimony (Sb) and in gallium arsenic (GaAs): sulphur (S), selenium (Se),tin (Sn), silicon (Si), and carbon (C). P-type dopants may include butare not limited to: boron (B), indium (In) and gallium (Ga). A p-typedopant is an element introduced to the semiconductor to generate freehole (by “accepting” electron from semiconductor atom and “releasing”hole at the same time). An acceptor atom must have one valence electronless than the host semiconductor. Boron (B) is the most common acceptorin silicon technology, but alternatives include indium and gallium(gallium features high diffusivity in SiO₂, and hence, oxide cannot beused as mask during Ga diffusion).

In embodiments of the present disclosure, first semiconductor layer 30may be initially undoped and second semiconductor layer 40 may beheavily doped. To provide electrical conductivity between first andsecond semiconductor layers 30, 40, first and semiconductor layers 30,40 can be subject to thermal annealing before, during, or afterprocesses of the present disclosure are performed. In an exampleembodiment, second semiconductor layer 40 can be doped with N-typedopants such as arsenic and/or phosphorous. The first and secondsemiconductor layers 30, 40 can then be annealed to cause dopants fromsecond semiconductor layer 40 to diffuse into first semiconductor layer30. Thus, first semiconductor layer 30 may become doped with a lowerconcentration of dopants than first semiconductor layer 30.

Crystalline base layer 20, first semiconductor layer 30, and secondsemiconductor layer 40 together may form a precursor structure 50positioned on substrate 10. Substrate 10 and precursor structure 50 canbe machined, processed, modified, etc. according to processes discussedherein to form an IC structure according to embodiments of the presentdisclosure. Processes of the present disclosure can also, optionally,include forming a sacrificial cap 60 on precursor structure 50.Sacrificial cap 60 can be composed of an electrically insulativesubstance, such as a nitride material (i.e., a substance which at leastpartially includes a nitrogen ion, such as silicon nitride (Si₃N₄),titanium nitride (TiN), gallium nitride (GaN), and/or a nitrided oxidematerial). As discussed elsewhere herein, sacrificial cap 60 can shieldsome components of precursor structure 50 and/or substrate 10 fromselective processing or removal steps which would otherwise remove theshielded layers or structures. Processes according to the presentdisclosure are described with sacrificial cap 60 being in place.

Referring now to FIG. 2, a trench mask 70 can be placed on sacrificialcap 60 and/or precursor structure 50 to allow the etching of at leastone area of the formed structure. To form an IC structure according toembodiments of the present disclosure, trench mask 70 can include one ormore openings 72 which expose a surface of precursor structure 50 orsacrificial cap 60. Portions of substrate 10, precursor structure 50,sacrificial cap 60, and/or other materials discussed herein can beremoved according to any currently known or later developed process forremoving materials from an IC structure, such as etching. “Etching”generally refers to the removal of material from a substrate (orstructures formed on the substrate), and is often performed with a mask(e.g., trench mask 70) in place so that material may selectively beremoved from a structure, while leaving the remaining materialunaffected. There are generally two categories of etching, (i) wet etchand (ii) dry etch. Wet etch is performed with a solvent (such as anacid) which may be chosen for its ability to selectively dissolve agiven material (such as oxide), while leaving another material (such aspolysilicon) relatively intact. The ability to selectively etchparticular materials is fundamental to many semiconductor fabricationprocesses. A wet etch will generally etch a homogeneous material (e.g.,oxide) isotropically, but a wet etch may also etch monocrystallinematerials (e.g., silicon wafers) anisotropically. Dry etch may beperformed using a plasma. Plasma systems can operate in several modes byadjusting the parameters of the plasma. Ordinary plasma etching producesenergetic free radicals, neutrally charged, that react at the surface ofthe wafer. Since neutral particles attack the wafer from all angles,this process is isotropic. Ion milling, or sputter etching, bombards thewafer with energetic ions of noble gases which approach the waferapproximately from one direction, and therefore this process is highlyanisotropic. Reactive-ion etching (RIE) operates under conditionsintermediate between sputter and plasma etching and may be used toproduce deep, narrow features, such as shallow trench isolation (STI)trenches. Portions of substrate 10, precursor structure 50 and/orsacrificial cap 60 can be removed by application of ordinary plasmaetching. In addition or alternatively, one or more other etchingprocesses described herein, or any other etching process currently knownor later developed, can be used or adapted to remove portions ofsubstrate 10, precursor structure 50 and/or sacrificial cap 60.

Turning to FIG. 3, trench mask 70 can be removed after portions ofsacrificial cap 60, precursor structure 50, and/or substrate 10 belowopening 72 are removed. The removing of portions of substrate 10,precursor structure 50, and/or sacrificial cap 60 can result in anopening 74 exposing a portion of substrate 10 beneath precursorstructure 50. Although some variations and/or combinations of removaltechniques, such as etching, may occur in processes of the presentdisclosure, at least one portion of substrate 10 can be exposed afterthe etching step is complete. Exposing a portion of substrate 10 canallow selective etching processes to remove portions of substrate 10and/or other materials in other process steps discussed herein.

Turning to FIG. 4, processes of the present disclosure can includeremoving (e.g., by selective etch) portions of substrate 10, firstsemiconductor layer 30, and second semiconductor layer 40 and toundercut an exposed extrinsic base region 80 of crystalline base layer20. Selective etching can refer to, e.g., an etching process in whichone or more materials are etched more rapidly than other materials,which may be etched very slowly or not etched at all. In an illustrativeexample, the selective etching of substrate 10, first semiconductorlayer 30, and second semiconductor layer 40 can be carried out by way ofa wet etch which leaves crystalline base layer 20 (composed of, e.g.,monocrystalline SiGe), and optionally sacrificial cap 60, largelyintact. This process can also undercut crystalline base layer 20 to forman exposed extrinsic base region 80 protruding from the remainingmaterials of precursor structure 50. Exposed extrinsic base region 80 ofcrystalline base layer 20 can be grown or otherwise enlarged asdescribed herein to increase its width while the remainder ofcrystalline base layer 20 retains its original width. The selectiveetching of substrate 10, first semiconductor layer 30, and secondsemiconductor layer 40 can optionally be followed by a selective etch ofsacrificial cap 60, e.g., by application of a hot phosphoric acid etch,to remove any overhanging regions of sacrificial cap 60 from precursorstructure 50.

Turning to FIG. 5, the present disclosure can include forming adielectric film 90 on substrate 10 and precursor structure 50, after theforming and removing processes discussed herein. A “dielectric”substance refers to any electrically insulative substance, whethercurrently known or later developed, used in an integrated circuitstructure. In an embodiment, dielectric film 90 can be composed ofsilicon nitride (Si₃N₄). Alternative dielectric materials used indielectric film 90 can include, e.g., silicon dioxide (SiO₂),fluorinated SiO₂ (FSG), hydrogenated silicon oxycarbide (SiCOH), porousSiCOH, boro-phospho-silicate glass (BPSG), silsesquioxanes, nearfrictionless carbon (NFC), carbon (C) doped oxides (i.e.,organosilicates) that include atoms of silicon (Si), carbon (C), oxygen(O), and/or hydrogen (H), thermosetting polyarylene ethers, SiLK (apolyarylene ether available from Dow Chemical Corporation), a spin-onsilicon-carbon containing polymer material available from JSRCorporation, other low dielectric constant (<3.9) material, or layersthereof. Dielectric film 90 can be formed on portions of substrate 10and/or precursor structure 50 by deposition alone, deposition combinedwith an etch-back procedure, or any other currently known or laterdeveloped process for forming a film of electrically insulating materialon a substance. As a specific example, forming dielectric film 90 caninclude forming a low-temperature oxide on both substrate 10 and theremaining portions of precursor structure 50, and then etchingdielectric film 90 from the top of the protruding regions of crystallinebase layer 20. Removing dielectric film 90 from the top of theprotruding regions of crystalline base layer 20 allows an extrinsicregion of crystalline base layer 20 be enlarged, e.g., by epitaxialgrowth, as discussed elsewhere herein. The forming of dielectric film 90may passivate (i.e., render nonconductive) the exposed surfaces ofsubstrate 10 and precursor structure 50 to electrically separate thecomponents of the resulting IC structure from other IC structures.

The processes discussed herein can form an isolation trench 92 whichpartially undercuts precursor structure 50. If desired, and as shown onthe right side of FIG. 5, isolation trench 92 can be filled with anoxide 94 to protect dielectric film 90 within isolation trench 92 duringother fabrication processes and steps. Oxide 94 can be formed, e.g., bydepositing a flowable oxide onto substrate 10, curing the flowable oxideinto a solid state, and then performing a selective oxide etch to removeportions of oxide 94 located outside of isolation trench 92. Oxide 94within isolation trench 92 can be removed after its shielding ofsubstrate 10 and/or dielectric film 90 from other processes discussedherein is no longer desired.

Crystalline base layer 20 can include an intrinsic base region 120 andan extrinsic base region 180. The greater thickness of extrinsic baseregion 180 relative to intrinsic base region 120 can provide technicaladvantages, such as a reduced resistance of the resulting IC structure.Furthermore, substrate 10 contacting crystalline base layer 20 atintrinsic base region 120 but not extrinsic base region 180 can reducethe resulting structure's parasitic capacitance. This structure can beformed by growing an exposed area of crystalline base layer 20positioned above isolation trench 92 (which may include oxide 94therein). The exposed area be enlarged, e.g., by depositing or growingmaterials according to any currently known or later developed process.In particular, monocrystalline SiGe can be selectively epitaxially grownon the exposed area of crystalline base layer 20 to form extrinsic baseregion 180. Where other portions of crystalline base layer 20 areexposed, epitaxial growing may cause these other portions of crystallinebase layer 20 to increase in thickness. The exposed portions ofcrystalline base layer 20 outside of extrinsic base region 180 maintainsubstantially their original thickness from the simultaneous oralternative deposition/etch characteristics of selective epitaxy.Specifically, the selective epitaxial growth on substrate 10 can occurat a faster rate because any growth on dielectric surfaces is slower andthus prohibited by the simultaneous or alternative etch processes. Theresulting extrinsic base region 180 can have a greater thickness thanintrinsic base region 120 positioned between substrate 10 and firstsemiconductor layer 30. The greater thickness of extrinsic base region180 as compared to intrinsic base region 120 reduces the electricalresistance across crystalline base region 20 between substrate 10 orfirst and second semiconductor layers 30, 40, and any electricalcontacts formed on extrinsic base region 180.

Turning to FIG. 6, processes of the present disclosure can includeremoving sacrificial cap 60 and forming silicide contacts 190 onsubstrate 10, second semiconductor layer 40, and extrinsic base region180. Sacrificial cap 60 and accompanying portions of dielectric film 90can be removed, e.g., by application of a hot phosphoric acid etch.Silicide contacts 190 may be formed using any now known or laterdeveloped technique, e.g., performing an in-situ pre-clean, depositing ametal such as titanium, nickel, cobalt, etc., annealing to have themetal react with silicon, and removing any unreacted metal. If desired,silicide contacts can be formed as a result of a self-aligned silicide(“silicide”) process. A salicide process refers to a process in whichsilicide contacts 190 are formed only in areas where deposited metal isin direct contact with silicon. Before forming silicide contacts 190 onsubstrate 10, portions of dielectric film 90 may be removed fromsubstrate 10 by applying a chemical process, such as a hot phosphoricacid etch or another currently known or later developed etching process.A portion of dielectric film 90 can remain on substrate 10 wheresilicide contacts 190 are not formed. The remaining dielectric film 90on substrate 10 alongside silicide contacts 190 can passivate thesurfaces of substrate 10 on which silicide contacts 190 are not present.As an alternative to forming silicide contacts 190 on extrinsic baseregion 180, embodiments of the present disclosure can optionally use amask (not shown) to remove an edge portion of extrinsic base region 180and form a sub-collector (not shown) thereon to create a collectorcontact outside the edge of extrinsic base region 180.

Turning to FIG. 7, alternative processes of forming extrinsic baseregions 180 (FIG. 6) according to the present disclosure are shown. Inan alternative process, dielectric spacers 200 can be formed withinopenings 74 of precursor structure 50 before substrate 10 and precursorstructure 50 are etched to undercut crystalline base layer 20.Dielectric spacers 200 can be composed of, e.g., an oxide compound(including the insulative oxide compounds discussed herein) which may beformed by deposition. Dielectric spacers 200 can also be in the form ofa composite spacer formed by, e.g., depositing a nitride film upon athin oxide layer, and then carrying out an end-pointed etch to etch thenitride over flat regions, forming a composite nitride/oxide spacer onthe sidewalls of precursor structure 50. An end-pointed etch can useoptical signals of an N-species material in the etch chamber, such thatwhen nitride film is etched from particular areas (e.g., flat regions),the underlying oxide is exposed, and the intensity of N-containingspecies is reduced, thereby signaling that the etching can be stopped.

Dielectric spacers 200 can passivate (i.e., render electricallynonconductive) the sidewalls of precursor structure 50 within openings74 to protect precursor structure 50 from etchants used to removeportions of substrate 10. After dielectric spacers 200 are formed,substrate 10 can be etched (e.g., with an etching material selective top-type doped silicon and/or SiGe) to undercut crystalline base layer 20and form an isolation trench 92 (FIGS. 5, 6) within substrate 10. At anypoint after isolation trench 92 (FIGS. 5, 6) is formed, dielectricspacers 200 can be removed.

Turning now to FIG. 8, isolation trench 92 can be filled with oxide 94before other portions of first and second semiconductor layers 30, 40,are removed. Oxide 94 can be provided in the form of a flowable oxidematerial deposited into isolation trench 92 (FIGS. 5, 6). Filling theundercut portions of substrate 10 with oxide 94 can provide mechanicalsupport to crystalline base layer 20 and/or prevent portions ofsubstrate 10 from being removed at the same time as portions ofprecursor structure 50. To remove portions of oxide 94 covering firstand/or second semiconductor layers 30, 40, oxide 94 can be exposed to asolution of hydrogen fluoride in a controlled oxide etch. Exposing thesidewalls of first and second semiconductor layers 30, 40 in openings 74can allow portions of precursor structure 50 to be removed according toother processes discussed herein.

Turning to FIG. 9, first and second semiconductor layers 30, 40, can besubjected to a selective lateral undercut etch after the undercutportions of substrate 10 are filled with oxide 94. The selective lateralundercut etch can create exposed extrinsic base regions 80 ofcrystalline base layer 20. This selective etch process can also undercutsacrificial cap 60 in the event that sacrificial cap 60 was notpreviously removed. Oxide 94 can shield substrate 10 from being etched.The selective etching can retain a portion of first and secondsemiconductor layers 30, 40 for use as an emitter or collector of abipolar transistor. At this point, dielectric spacers can be formedaccording to the processes described previously, and crystalline baselayer 20 can be grown to form extrinsic base region 180 (FIG. 5). Afterthe formation of extrinsic base by selective epitaxy, oxide 94 can beremoved from isolation trench 92 (e.g., from exposure to a solution ofhydrogen fluoride in a controlled oxide etch), and the remainingcomponents discussed herein can be formed as described herein.

Turning to FIG. 10, embodiments of the present disclosure provide an ICstructure 250. IC structure 250 can be formed as a result of theprocesses described herein and shown in FIGS. 1-6, optionally includingthe optional steps further described herein and shown in FIGS. 7-9. Inan embodiment, further process steps described herein can convert thestructure shown in FIG. 6 into IC structure 250 shown in FIG. 10. ICstructure 250 can be used as a bipolar transistor, with substrate 10being a collector or emitter, crystalline base layer 20 (includingintrinsic base region 120 and extrinsic base region 180) being a base,and second semiconductor layer 40 being a collector or emitter set offfrom and electrically coupled to the base through first semiconductorlayer 30. At any point during the processes of forming IC structure 250discussed herein, substrate 10 can be doped either p-type or n-type toform an electrically conductive substance capable of acting as acollector or emitter, with second semiconductor layer 40 being dopedp-type or n-type to act as a the complementary emitter or collector. Inaddition, the remaining portions of precursor structure 50 and/orsacrificial cap 60 adjoining trench isolations 15 can optionally beremoved by of the removal techniques discussed herein, whether appliedalone or in combination with other techniques.

IC structure 250 can include substrate 10 positioned alongside orotherwise adjacent to an insulating region (i.e., isolation trench 92(FIGS. 5, 6, 8, 9). The openings between the various components of ICstructure 250 can be filled with a dielectric material 255 such as oneof the example dielectric materials discussed herein (e.g., a solidelectrolyte or other substance such as a flowable oxide), or may befilled with a gas dielectric material (i.e., a partially or completelygaseous substance with electrically insulative properties, such as air)to further electrically insulate separated components of IC structure250 from each other. Substrate 10 can be composed of a dopedsemiconductive material such as p-silicon to form a doped substrateregion. Substrate 10 can make up a portion or the entirety of an emitteror collector region of a bipolar transistor. Crystalline base region 20composed of a conductive or semiconductive crystalline material such asmonocrystalline SiGe can be at least partially located on and contactingsubstrate 10. Crystalline base region 20 can function as a crystallinebase structure composed of intrinsic base region 120 and extrinsic baseregion 180. Intrinsic base region 120 can be located on and be incontact with substrate 10, and may have a thickness of, e.g., betweenapproximately ten nm and approximately thirty nm. Extrinsic base region180 can be located alongside or otherwise adjacent to intrinsic baseregion 180, and may be composed of the same material as intrinsic baseregion 120. Extrinsic base region 180 can have a thickness greater thanthe thickness of intrinsic base region 120. The thickness of extrinsicbase region 180 can be between approximately twenty-five nm andapproximately three hundred nm, so long as the thickness of extrinsicbase region 180 exceeds the thickness of intrinsic base region 120.

Contacts 260, which may be composed of any currently known or laterdeveloped conductive material (e.g., tungsten, copper, aluminum, silver,etc.) can couple silicide contacts 190 to external components and/or ICstructures, including metal level wire layers (not shown). To formcontacts 260, portions of dielectric material above silicide contacts190, can be removed by removal processes, such as etching, to formopenings. Contacts 260 can be formed as metal deposited into theopenings removed from dielectric material 255.

IC structure 250 can also include components which together make up theemitter or collector region of a bipolar transistor. More specifically,first and second semiconductor layers 30, 40, can make up the structureof the complementary emitter or collector to the collector or emitter ofsubstrate 10. First semiconductor layer 30 can be composed of a dopedsemiconductive material (e.g., produced by thermal annealing) or anundoped semiconductive material, such as i-silicon, and may be locatedon intrinsic base region 120 of crystalline base layer 20. Secondsemiconductor layer 40 can be composed of a semiconductive materialdoped the same as substrate 10 and may be located on first semiconductorlayer 30, thereby forming a doped semiconductor layer. Firstsemiconductor layer 30 and second semiconductor layer 40 can be composedof the same semiconductive material or can be composed of differentsemiconductive materials. The position of first semiconductor layer 30between crystalline base region and second semiconductor layer 40 formsa heterojunction (e.g., an electrical interface between two differentsemiconductors with different bandgaps) between crystalline base layer20 and first and second semiconductor layers 30, 40, in addition tobetween substrate 10 and crystalline base layer 20. First semiconductorlayer 30 can haves a thickness of between approximately two nm andapproximately thirty nm. As discussed elsewhere herein, IC structure 250can also include dielectric film 90 on portions of substrate 10,crystalline base layer 20, and first and second semiconductor layers 30,40. Dielectric film 90 can electrically insulate first and secondsemiconductor layers 30, 40 from extrinsic base region 180 ofcrystalline base layer 20, and can electrically insulate othercomponents of IC structure 250 from each other.

IC structure 250 can include several of the elements discussed herein onopposing sides of the resulting structure. Specifically, a pair ofinsulating regions filled with dielectric material 255 can be adjacentto two locations of substrate 10, and crystalline base layer 20 caninclude a pair of extrinsic base regions 180 located at two locationsadjacent to one of the two regions of dielectric material 255. In aparticular embodiment, the two locations can be opposing ends ofcrystalline base layer within a two dimensional plane, as shown in FIG.10. Each of the pair of extrinsic base regions 180 can have a greaterthickness than the thickness of intrinsic base region 120. Including tworegions of dielectric material 255 and two extrinsic base regions 180 inIC structure 250 can allow multiple silicide contacts 190 to be formedon each of substrate 10 and crystalline base layer 20.

In a particular embodiment, IC structure 250 can include silicidecontacts 190 formed on and in contact with substrate 10. To improveelectrical conductivity through substrate 10 of IC structure 250,substrate 10 may have varying concentrations of dopants therein.Specifically, substrate 10 can include a sub-collector region 270located adjacent to and/or beneath silicide contacts 190 and a collectorregion 272 located adjacent to crystalline base layer 20. Sub-collectorregion 270 may have a higher concentration of dopant materials (e.g.,arsenic or boron) than collector region 272 to preserve a heterojunction(i.e., a particular bandgap difference) between substrate 10 andcrystalline base layer 20 while reducing the electrical resistancebetween silicide contacts 190 and substrate 10. To form sub-collectorregion 270 and collector region 272, collector region 272 can beimplanted with a high concentration of dopants and then thermallyannealed such that the dopants diffuse into sub-collector region 270.The forming of sub-collector region 270 and collector region 272 canoccur before, during, or after the process steps disclosed herein whereapplicable. It is also understood that the dopant materials can beswitched out for materials with different polarities to create, e.g.,sub-emitter and emitter regions with respective concentrations ofdopants.

An interface between substrate 10 and dielectric material 255 caninclude a substantially sloped sidewall profile which definesdifferent-sized surface areas. The substantially sloped sidewall profileof substrate 10 can be formed during the selective removing of portionsof substrate 10 and first and second semiconductor layers 30, 40 toundercut crystalline base layer 20. Specifically, a portion ofdielectric material 255 can include a first surface area adjacent toextrinsic base region 180 of crystalline base layer 20 and an opposingsecond surface area adjacent to substrate 10. Processes of forming ICstructure 250, including the selective etching and other removalprocesses discussed herein, can cause the first surface area adjacent tocrystalline base layer 20 to be greater in size than the second surfacearea adjacent to substrate 10. This difference in surface area canincrease the length of extrinsic base region 180 while independentlyreducing the parasitic capacitance of substrate 10 (i.e., by reducingthe contact area between substrate 10 and crystalline base layer 20).

IC structure 250 can function as a bipolar transistor when applied aspart of a larger integrated circuit or electrical device. Substrate 10of IC structure 250 can function as either the emitter or the collectorof the bipolar transistor by being electrically coupled to crystallinebase layer 20. Crystalline base layer 20, including both intrinsic baseregion 120 and extrinsic base region 180, can function as the base ofthe bipolar transistor. First and second semiconductor layers 30, 40,together can function as the complementary emitter or collector tosubstrate 10. In particular, the interface between crystalline baselayer 20 and its adjacent components forms an electrical heterojunctionbetween different materials. IC structures 250 with the characteristicsset out herein reduce the parasitic resistance and capacitance of abipolar transistor, such that the transistor can be applied operably inapplications where the frequency of an electric signal is equal to or inexcess of five hundred GHz.

The descriptions of the various embodiments of the present inventionhave been presented for purposes of illustration, but are not intendedto be exhaustive or limited to the embodiments disclosed. Manymodifications and variations will be apparent to those of ordinary skillin the art without departing from the scope and spirit of the describedembodiments. The terminology used herein was chosen to best explain theprinciples of the embodiments, the practical application or technicalimprovement over technologies found in the marketplace, or to enableothers of ordinary skill in the art to understand the embodimentsdisclosed herein.

What is claimed is:
 1. An integrated circuit (IC) structure comprising:a doped substrate region adjacent to an insulating region; a crystallinebase structure including: an intrinsic base region located on andcontacting the doped substrate region, the intrinsic base region havinga first thickness; an extrinsic base region adjacent to the insulatingregion, wherein the extrinsic base region has a second thickness greaterthan the first thickness; a semiconductor layer located on the intrinsicbase region of the crystalline base structure; and a doped semiconductorlayer located on the semiconductor layer.
 2. The IC structure of claim1, wherein the insulating region comprises a pair of insulating regionsadjacent to two locations of the doped substrate region, and thecrystalline base structure includes a pair of extrinsic base regionshaving the second thickness, wherein each of the pair of extrinsic baseregions is adjacent to a corresponding one of the pair of insulatingregions.
 3. The IC structure of claim 1, wherein the crystalline basestructure comprises monocrystalline silicon germanium (SiGe).
 4. The ICstructure of claim 1, further comprising a spacer adjacent to thesemiconductor layer and the doped semiconductor layer, wherein thespacer electrically insulates the semiconductor layer and the dopedsemiconductor layer from the extrinsic base region of the crystallinebase structure.
 5. The IC structure of claim 1, wherein the dopedsubstrate region comprises one of an emitter and a collector of abipolar transistor, the doped semiconductor layer comprises the other ofthe emitter and the collector of the bipolar transistor, and thecrystalline base structure comprises a base of the bipolar transistor.6. The IC structure of claim 1, further comprising a silicide contactlocated on one of the doped substrate and the extrinsic base region ofthe crystalline base structure.
 7. The IC structure of claim 6, whereinthe silicide contact is located on the doped substrate, and the dopedsubstrate further includes a sub-collector region adjacent to thesilicide contact having a higher concentration of dopants than acollector region of the doped substrate adjacent to the crystalline basestructure.
 8. The IC structure of claim 1, further comprising adielectric material positioned within the insulating region.
 9. The ICstructure of claim 1, wherein the insulating region includes a firstsurface area adjacent to the extrinsic base region of the crystallinebase structure and an opposing second surface area adjacent to the dopedsubstrate region, the first surface area being greater than the secondsurface area.